1. Fundamental aspects of silicon oxidation.
by Chabal, Yves J. (Ed.) 
Price: USD 16.00
Dealer: ZVAB, Antiquariat im Hufelandhaus GmbH vormals Lange & Springer
Description: ISBN10: 354041682X, ISBN13: 9783540416821, [publisher: Berlin/Heidelberg/New York/Barcelona/Hong Kong/London/Milan/Paris/Singapore/Tokyo, Springer.] Hardcover 24 cm. 147 figs., 21 in color, XIII, 260 p. Hardcover Versand aus Deutschland / We dispatch from Germany via Air Mail. Einband bestoßen, daher Mängelexemplar gestempelt, sonst sehr guter Zustand. Imperfect copy due to slightly bumped cover, apart from this in very good condition. Stamped. Springer series in materials science ; 46 Physics and astronomy online library Sprache: Englisch. [Berlin, Germany] [Publication Year: 2001]  

2. Fundamental aspects of silicon oxidation.
by Chabal, Yves J. (Ed.) 
Price: USD 16.00
Dealer: ZVAB, Gast & Hoyer GmbH
Description: ISBN10: 354041682X, ISBN13: 9783540416821, [publisher: Berlin/Heidelberg/New York/Barcelona/Hong Kong/London/Milan/Paris/Singapore/Tokyo, Springer.] Hardcover 24 cm. 147 figs., 21 in color, XIII, 260 p. Hardcover Versand aus Deutschland / We dispatch from Germany via Air Mail. Einband bestoßen, daher Mängelexemplar gestempelt, sonst sehr guter Zustand. Imperfect copy due to slightly bumped cover, apart from this in very good condition. Stamped. Springer series in materials science ; 46 Physics and astronomy online library Sprache: Englisch. [Berlin, B, Germany] [Publication Year: 2001]  

3. Fundamental aspects of silicon oxidation.
by Chabal, Yves J. (Ed.) 
Price: USD 17.63
Dealer: AbebooksDE, Antiquariat im Hufelandhaus GmbH vormals Lange & Springer
Description: ISBN10: 354041682X, ISBN13: 9783540416821, [publisher: Berlin/Heidelberg/New York/Barcelona/Hong Kong/London/Milan/Paris/Singapore/Tokyo, Springer.] Hardcover 24 cm. 147 figs., 21 in color, XIII, 260 p. Hardcover Versand aus Deutschland / We dispatch from Germany via Air Mail. Einband bestoßen, daher Mängelexemplar gestempelt, sonst sehr guter Zustand. Imperfect copy due to slightly bumped cover, apart from this in very good condition. Stamped. Springer series in materials science ; 46 Physics and astronomy online library Sprache: Englisch. [Berlin, Germany] [Publication Year: 2001]  

4. Fundamental aspects of silicon oxidation.
by Chabal, Yves J. (Ed.) 
Price: USD 17.63
Dealer: AbebooksDE, Gast & Hoyer GmbH
Description: ISBN10: 354041682X, ISBN13: 9783540416821, [publisher: Berlin/Heidelberg/New York/Barcelona/Hong Kong/London/Milan/Paris/Singapore/Tokyo, Springer.] Hardcover 24 cm. 147 figs., 21 in color, XIII, 260 p. Hardcover Versand aus Deutschland / We dispatch from Germany via Air Mail. Einband bestoßen, daher Mängelexemplar gestempelt, sonst sehr guter Zustand. Imperfect copy due to slightly bumped cover, apart from this in very good condition. Stamped. Springer series in materials science ; 46 Physics and astronomy online library Sprache: Englisch. [Berlin, B, Germany] [Publication Year: 2001]  

5. Fundamental Aspects of Silicon Oxidation Springer Series in Materials Science
by Yves J. Chabal 
Price: USD 19.14
Dealer: Biblio, Revaluation Books
Description: Springer Verlag, Date: 2001. Hardcover. New. 1st edition. 273 pages. 9.25x6.00x0.50 inches. 2001. Springer Verlag ISBN 354041682X 9783540416821 [GB] 

6. Fundamental Aspects of Silicon Oxidation (Springer Series in Materials Science) [Hardcover ]
Price: USD 26.53
Dealer: Abebooks, booksXpress
Description: ISBN10: 354041682X, ISBN13: 9783540416821, [publisher: Springer] Hardcover [Bayonne, NJ, U.S.A.] [Publication Year: 2001]  

7. Fundamental Aspects of Silicon Oxidation (Springer Series in Materials Science)
by Yves J. Chabal 
Price: USD 28.07
Dealer: Alibris, Revaluation Books via Alibris
Description: Springer Verlag 2001 2001 ed. Hardcover New 1st edition. 273 pages. 9.25x6.00x0.50 inches. 

8. Fundamental Aspects of Silicon Oxidation
by Chabal, Yves J (Editor) 
Price: USD 103.32
Dealer: Alibris
Description: Berlin, Heidelberg Springer 2001 2001 ed. Hard cover New. Sewn binding. Cloth over boards. 262 p. Contains: Unspecified, Illustrations, black & white, Illustrations, color, Tables, black & white. Springer Materials Science, 46. 

9. Fundamental Aspects of Silicon Oxidation
by Yves J. Chabal 
Price: USD 109.42
Dealer: ZVAB, AHA-BUCH GmbH
Description: ISBN10: 354041682X, ISBN13: 9783540416821, [publisher: Springer Berlin Heidelberg] Softcover Druck auf Anfrage Neuware - Printed after ordering - The idea for a book dealing specifically with elementary processes in silicon oxidation was formulated after a stimulating symposium that I organized at the American Physical Society meeting in March, 1998. The symposium, en titled 'Dynamics of silicon etching and oxidation', explored the mechanisms governing silicon oxidation. With three experimental talks (Hines, Weldon and Gibson) and two theoretical presentations (Pasquarello and Pantelides), it provided a good cross-section of the recent efforts to characterize the in terfacial region of silicon oxide grown on silicon. The novelty of this work comes from the present experimental and theo retical advances that allow the investigation of the formation of ultra-thin silicon oxides. Although structural characterization of bulk silicon oxides and electrical characterization of thin oxides and their interfaces with silicon have produced an extensive body of work over more than forty years, a mechanis tic understanding of the initial oxidation processes has remained elusive. In the past, both the experimental and theoretical efforts have been thwarted by the complexity of dealing with the formation of a mostly amorphous oxide on a crystalline substrate. In this book we present a survey of the state-of-the-art methods, both ex perimental and theoretical, specifically dealing with the issue of amorphous dielectric growth. Each chapter critically reviews and cross-correlates infor mation provided by experimental techniques, such as microscopy, spectro scopy, or scattering, with results obtained using theoretical methods, such as ab initio electronic structure calculations, molecular dynamics, and Monte Carlo simulations. [Einbeck, Germany] [Publication Year: 2001]  

10. Fundamental Aspects of Silicon Oxidation
by Yves J. Chabal 
Price: USD 120.57
Dealer: AbebooksDE, AHA-BUCH GmbH
Description: ISBN10: 354041682X, ISBN13: 9783540416821, [publisher: Springer Berlin Heidelberg] Softcover Druck auf Anfrage Neuware - Printed after ordering - The idea for a book dealing specifically with elementary processes in silicon oxidation was formulated after a stimulating symposium that I organized at the American Physical Society meeting in March, 1998. The symposium, en titled 'Dynamics of silicon etching and oxidation', explored the mechanisms governing silicon oxidation. With three experimental talks (Hines, Weldon and Gibson) and two theoretical presentations (Pasquarello and Pantelides), it provided a good cross-section of the recent efforts to characterize the in terfacial region of silicon oxide grown on silicon. The novelty of this work comes from the present experimental and theo retical advances that allow the investigation of the formation of ultra-thin silicon oxides. Although structural characterization of bulk silicon oxides and electrical characterization of thin oxides and their interfaces with silicon have produced an extensive body of work over more than forty years, a mechanis tic understanding of the initial oxidation processes has remained elusive. In the past, both the experimental and theoretical efforts have been thwarted by the complexity of dealing with the formation of a mostly amorphous oxide on a crystalline substrate. In this book we present a survey of the state-of-the-art methods, both ex perimental and theoretical, specifically dealing with the issue of amorphous dielectric growth. Each chapter critically reviews and cross-correlates infor mation provided by experimental techniques, such as microscopy, spectro scopy, or scattering, with results obtained using theoretical methods, such as ab initio electronic structure calculations, molecular dynamics, and Monte Carlo simulations. [Einbeck, Germany] [Publication Year: 2001]  

11. Fundamental Aspects of Silicon Oxidation (Springer Series in Materials Science, 46)
Price: USD 130.39
Dealer: Abebooks, Books Unplugged
Description: ISBN10: 354041682X, ISBN13: 9783540416821, [publisher: Springer] Hardcover Buy with confidence! Book is in good condition with minor wear to the pages, binding, and minor marks within [Amherst, NY, U.S.A.] [Publication Year: 2001]  

12. Fundamental Aspects of Silicon Oxidation (Springer Series in Materials Science, 46)
Price: USD 136.31
Dealer: Abebooks, GF Books, Inc.
Description: ISBN10: 354041682X, ISBN13: 9783540416821, [publisher: Springer] Hardcover Book is in NEW condition. [Hawthorne, CA, U.S.A.] [Publication Year: 2001]  

13. Fundamental Aspects of Silicon Oxidation (Springer Series in Materials Science, 46)
Price: USD 136.32
Dealer: Abebooks, Book Deals
Description: ISBN10: 354041682X, ISBN13: 9783540416821, [publisher: Springer] Hardcover Very Good condition. Shows only minor signs of wear, and very minimal markings inside (if any). [Tucson, AZ, U.S.A.] [Publication Year: 2001]  

14. Fundamental Aspects of Silicon Oxidation
by Yves Jean Chabal 
Price: USD 144.82
Dealer: Biblio, The Saint Bookstore
Description: Hardback. New. Discusses silicon oxidation in a tutorial fashion from both experimental and theoretical viewpoints. The authors report on the state of the art both at Lucent Technology and in academic research. The book will appeal to researchers and advanced students. ISBN 354041682x 9783540416821 [GB] 

15. Fundamental Aspects of Silicon Oxidation (Springer Series in Materials Science)
by Chabal, Yves J. 
Price: USD 207.09
Dealer: AbebooksUK, Mispah books
Description: ISBN10: 354041682X, ISBN13: 9783540416821, [publisher: Springer] Hardcover Like New [Redhill, SURRE, United Kingdom] [Publication Year: 2001]  

16. Fundamental Aspects of Silicon Oxidation Springer Series in Materials Science
by Yves J. Chabal Editor 
Price: USD 209.68
Dealer: Biblio, Ergodebooks
Description: Springer, Date: 2001-06-15. 2001. Hardcover. Used:Good. 2001. Springer ISBN 354041682X 9783540416821 [US]